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click on this section to link to the appropriate technical paper. click on this section to link to the directfet ? website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. directfet isometric description the irf9383mtrpbf combines the latest hexfet ? p-channel power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.6 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra -red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. t he directfet ? package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. applicable directfet outline and substrate outline (see p.7,8 for details) directfet ? p-channel power mosfet environmentaly friendly product rohs compliant containing no lead, no bromide and no halogen common-drain p-channel mosfets provides high level of integration and very low rds(on) fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage features and benefits applications isolation switch for input power or battery application high side switch for inverter applications 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 t y p i c a l r d s ( o n ) ( m ) i d = -22a t j = 25c t j = 125c 0 20 40 60 80 100 120 140 160 180 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v v ds = -6.0v i d = -18a v dss v gs r ds(on) r ds(on) -30v max 20v max 2.3m @-10v 3.8m @-4.5v q g tot q gd q gs2 q rr q oss v gs(th) 67nc 29nc 9.4nc 315nc 59nc -1.8v absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current v a max. -17 -160 -180 20 -30 -22 sq sx st mq mx mt mp mc

! dd g s s form quantity irf9383mtrpbf directfet ? medi um can tape and reel 4800 irf9383mtr1pbf directfet ? medi um can tape and reel 1000 "tr1" suffix eol notice #264 orderable part number package type standard pack note

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pulse width 400 s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.0159 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.3 2.9 ??? 3.8 4.8 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v gs(th) / t j gate threshold voltage coefficient ??? -5.9 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 56 ??? ??? s q g total gate charge ??? 130 ??? q g total gate charge ??? 67 ??? q gs1 pre- vth gate-to-source charge ??? 12 ??? v ds = -15v q gs2 post -vth gate-to-source charge ??? 9.4 ??? v gs = -4.5v q gd gate-to-drain charge ??? 29 ??? i d = -18a q godr gate charge overdrive ??? 16.6 ??? see fig.15 q sw switch charge (q gs2 + q gd ) ??? 38.4 ??? q oss output charge ??? 59 ??? nc r g gate resistance ??? 6.5 ??? t d(on) turn-on delay time ??? 29 ??? t r rise time ??? 160 ??? t d(off) turn-off delay time ??? 115 ??? t f fall time ??? 110 ??? c iss input capacitance ??? 7305 ??? c oss output capacitance ??? 1780 ??? c rss reverse transfer capacitance ??? 1030 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 52 78 ns q rr reverse recovery charge ??? 315 470 nc ns pf a ??? ??? ??? ??? -114 -180 a m na nc di/dt = 500a/ s t j = 25c, i s = -18a, v gs = 0v showing the integral reverse p-n junction diode. v gs = -4.5v, i d = -18a t j = 25c, i f = -18a, ,v dd = -15v v gs = 0v v ds = -15v i d = -18a v dd = -15v, v gs = -4.5v v ds = v gs , i d = -150 a v ds = -24v, v gs = 0v v gs = -20v v gs = 20v conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1.0ma v gs = -10v, i d = -22a v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c mosfet symbol r g = 1.8 v ds = -10v, i d = -18a conditions see fig.17 ? = 1.0khz v ds = -15v, v gs = -10v, i d = -18a g d s

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fig 3. maximum effective transient thermal impedance, junction-to-ambient r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) used double sided cooling, mounting pad with large heatsink.
mounted on minimum footprint full size board with metalized back and with small clip heatsink. 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 2.7194 0.0138004 23.1599 55.766563 10.2579 0.6520047 23.6469 7.7259631 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 absolute maximum ratings parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 60 r 12.5 ??? r 20 ??? c/w r , ??? 1.1 r 1.0 w/c w c 1.3 0.02 270 -40 to + 150 max. 113 2.1

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fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -5.0v -4.5v -3.5v -3.25v -3.0v -2.75v bottom -2.5v 60 s pulse width tj = 25c -2.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.5v 60 s pulse width tj = 150c vgs top -10v -5.0v -4.5v -3.5v -3.25v -3.0v -2.75v bottom -2.5v 1 2 3 4 5 -v gs , gate-to-source voltage (v) 1.0 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = -15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = -22a v gs = -10v v gs = -4.5v 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 180 -i d , drain current (a) 2 4 6 8 10 12 t y p i c a l r d s ( o n ) ( m ) t j = 25c vgs = -3.5v vgs = -4.5v vgs = -5.0v vgs = -6.0v vgs = -8.0v vgs = -10v vgs = -12v vgs = -15v

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fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig 11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -v sd , source-to-drain voltage (v) 0 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 - i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 - t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -150 a i d = -250 a i d = -1.0ma i d = -1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.6a -2.3a bottom -18a 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

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fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v

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0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period / /

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fig 20. 0 0.(1 for p-channel hexfet power mosfets g s g=gate d=drain s=source s d d d d

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"# code a b c d e f g h j k l m p 0.017 0.028 0.007 0.040 0.095 0.156 0.028 0.018 0.028 max 0.250 0.38 0.59 0.08 0.88 2.28 3.85 0.68 0.35 0.68 min 6.25 4.80 0.42 0.70 0.17 1.02 2.42 3.95 0.72 0.45 0.72 max 6.35 5.05 0.015 0.023 0.003 0.090 0.035 0.152 0.027 0.027 0.014 min 0.189 0.246 metric imperial dimensions 1.38 1.42 0.80 0.84 0.056 0.054 0.033 0.031 r 0.03 0.08 0.001 0.003 dimensions are shown in millimeters (inches) 0.199 gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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$% & ' ! loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf9383mtrpbf). for 1000 parts on 7" reel, order irf9383mtr1pbf code min max min max a 330 n.c 12.992 n.c b 20.2 n.c 0.795 n.c c 12.8 13.2 0.504 0.520 d 1.5 n.c 0.059 n.c e 100.0 n.c 3.937 n.c f n.c 18.4 n.c 0.724 g 12.4 14.4 0.488 0.567 h 11.9 15.4 0.469 0.606 me tric imp e ria l standard option (qty 4800) reel dimensions note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. !" #$

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) msl1 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level directfet ? date comments 2/17/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #264). ? updated data sheet with new ir corporate template. 2/25/2014 ? 1 . ? 1. ? 1 10.. revision history 6/2/2015

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